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3DD100C

Part Number	3DD100C
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 5, 2020
Detailed Description	E Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD100C DESCRIPTION ·With TO-66 packaging ·...
Datasheet	3DD100C PDF File

Overview

E Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD100C DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1.
5 A PD Total Power Dissipation@TC=75℃ 20 W TJ Max.
Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.
0 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD100C ELECTRICAL CHARACTERIST...

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