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3DD100A

INCHANGE
Part Number 3DD100A
Manufacturer INCHANGE
Description NPN Transistor
Published Sep 5, 2020
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation v...
Datasheet PDF File 3DD100A PDF File

3DD100A
3DD100A

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·With TO-66 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 1.
5 A PD Total Power Dissipation@TC=75℃ 20 W TJ Max.
Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 5.
0 UNIT ℃/W 3DD100A isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustai...


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