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3DD15B

Part Number 3DD15B
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 18, 2016
Detailed Description isc Silicon NPN Power Transistor 3DD15B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC C...
Datasheet 3DD15B




Overview
isc Silicon NPN Power Transistor 3DD15B DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.
) ·DC Current Gain- : hFE= 30~250(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
5V(Max)@ IC= 2.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B&W TV horizontal output , regulated power supply and power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation@TC=75℃ 50 W TJ Ju...






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