SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=50nA(Max.
), IBL=50nA(Max.
) @VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage : VCE(sat)=0.
3V(Max.
) @IC=50mA, IB=5mA.
Low Collector Output Capacitance : Cob=4pF(Max.
) @VCB=5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating
VCBO VCEO VEBO
IC IB PC * Tj Tstg
RATING 60 40 6 200 50 200 150
-55 150
UNIT V V V mA mA mW
H
A A1 CC
2N2904E
EPITAXIAL PLANAR
NPN TR...