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2N2904

Part Number	2N2904
Manufacturer	NTE
Description	Silicon PNP Transistor
Published	Dec 1, 2019
Detailed Description	2N2904 Silicon PNP Transistor General Purpose TO−39 Type Package Description: The 2N2904 is a silicon PNP transistor in...
Datasheet	2N2904 PDF File

Overview

2N2904 Silicon PNP Transistor General Purpose TO−39 Type Package Description: The 2N2904 is a silicon PNP transistor in a TO−39 type package designed for small signal, general purpose and switching applications.
Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector−Base Voltage, VCBO .
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60V Collector−Emitter Voltage, VCEO .
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40V Emitter−Base Voltage, VEBO .
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5V Continuous Collector Current, IC .
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600mA Total Device Dissipation, TTAC = = +25C +25C .
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800mW .
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3W Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Collector−Base Breakdown Voltage Collector−Emitter Breakdown Voltage Emitter−Base Breakdown Voltage Collector−Emitter Saturation Voltage Base−Emitter Saturation Voltage DC Current Gain ICBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) hFE VCB = 50V IC = 10A IC = 10mA IE = 10A IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 100A, VCE = 10V IC = 1mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V Min Typ Max Unit − − 20 nA 60 − − V 40 − − V 5 −−V − − 0.
4 V − − 1.
6 V − − 1.
3 V − − 2.
6 V 20 − − 25 − − 35 − − 40 − 120 20 − − Electrical Ch...

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