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2N2904

VPT
Part Number 2N2904
Manufacturer VPT
Description Radiation Hardened PNP Transistors
Published Oct 28, 2019
Detailed Description 2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features • Qual...
Datasheet PDF File 2N2904 PDF File

2N2904
2N2904

Overview
2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-PRF-19500/290 • Available in JAN, JANTX, JANTXV, JANS and JANSR • Radiation Tolerant Levels M, D, P, L and R • TO-39 and TO-5 package styles • General Purpose Switching and Amplifier Applications Rev.
V3 Electrical Specifications @ TA = 25°C Parameter Off Characteristics: Collector - Emitter Breakdown Test Conditions IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector - Base Cutoff Current VCB = -60 V dc Symbol Units Minimum Maximum V(BR)CEO V dc -40 -60 -60 ICBO1 µA dc — — -10 Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL VEB = -5.
0 V dc ICBO2 nA dc — IEBO1 µA dc — -20 -10 -10 -10 Emitter - Base Cutoff Current VEB = -3.
5 V dc IEBO2 nA dc — Collector-Emitter Cutoff Current 2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE = -60V dc 2N2905A, 2N2905AL; VCE = -60V dc ICES µA dc -50 1 1 1 1.
Pulse Test: Pulse Width = 300 us, Duty Cycle < 2%.
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com 2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Parameter On Characteristics: Forward Current Transfer Ratio Forward Current Transfer Ratio Test Conditions VCE = -10 V dc, IC = -0.
1 mA dc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL VCE = -10 V dc, IC = -1.
0 mA dc 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Rev.
V3 Symbol Units Minimum Maximum 20 hFE1 35 40 75 25 175 hFE2 50 450 40 175 100 450 Forward Current Transfer Ratio VCE = -10 V dc, IC = -10 mA dc 2N2904 2N2905 2N2904A, 2N29...


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