SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3906SC
EPITAXIAL PLANAR
PNP TRANSISTOR
FEATURES Low Leakage Current : ICEX=-50nA(Max.
), IBL=-50nA(Max.
) @VCE=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage : VCE(sat)=-0.
4V(Max.
) @IC=-50mA, IB=-5mA.
Complementary to 2N3904SC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-40
Collector-Emitter Voltage
VCEO
-40
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -200
Base Current
IB -50
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.
5% Alumi...