INCHANGE Semiconductor
isc Silicon
PNP Power
Transistor
DESCRIPTION ·High Transition Frenquency : fT=200MHz(Typ.
) ·Complementary to 2SC5171
APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications
isc Product Specification
2SA1930
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-180
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-2 A
IB Base Current-Continuous
Pc
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-1 A 20 W 150 ℃ -55~150 ℃
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