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2SA1905

Toshiba Semiconductor
Part Number 2SA1905
Manufacturer Toshiba Semiconductor
Description Silicon PNP Epitaxial Type Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. 2SA1905 Unit: ...
Datasheet PDF File 2SA1905 PDF File

2SA1905
2SA1905

Overview
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications.
2SA1905 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.
4 V (max) • High speed switching time: tstg = 1.
0 μs (typ.
) • Complementary to 2SC5076 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −1 A Collector power dissipation PC 1.
3 W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in JEITA TOSHIBA ― 2-8M1A temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 0.
55 g (typ.
) operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Downloaded from Elcodis.
com electronic components distributor 1 2006-11-09 Electrical Characteristics (Ta = 25°C) 2SA1905 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = −50 V, IE = 0 IEBO VEB = −5 V, IC = 0 V (BR) CEO IC = −10 mA, IB = 0 hFE (1) (Note) VCE = −1 V, IC = −1 A hFE (2) VCE (sat) VCE = −1 V, IC = −3 A IC = −3 A, IB = −0.
15 A VBE (sat) IC = −3 A, IB = −0.
15 A fT VCE = −4 V, IC = −1 A Cob VCB = −10 V, IE = 0, f = 1 MHz Min Typ.
Max Unit ― ― −1 μA ― ― −1 μA −50 ― ...


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