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2SA1900

Rohm
Part Number 2SA1900
Manufacturer Rohm
Description Medium Power Transistor
Published Mar 22, 2005
Detailed Description Transistors 2SA1900 Medium power transistor (−50V, −1A) 2SA1900 zFeatures 1) Low saturation voltage, typically VCE(s...
Datasheet PDF File 2SA1900 PDF File

2SA1900
2SA1900


Overview
Transistors 2SA1900 Medium power transistor (−50V, −1A) 2SA1900 zFeatures 1) Low saturation voltage, typically VCE(sat)=−0.
15V at IC/ IB=−500mA/−50mA 2) PC=2W (on 40×40×0.
7mm ceramic board) 3) Complements the 2SC5053 zDimensions (Unit : mm) MPT3 z Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter- base voltage Collector current Symbol VCBO VCEO VEBO IC Limits −60 −50 −5 −1 −2 Collector power dissipation PC 0.
5 2 Collector power dissipation tj 150 Storage temperature tstg −55 to +150 ∗1 Pw=20ms, Duty=1/2 ∗2 When mounted on a 40 40 0.
7mm seramic board.
+ + (1)Base (2)Collector (3)Emitter Unit V V V A A (Pulse) W W °C °C ∗1 ∗2 zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO Emitter cutoff current Collector-emitter saturation voltage IEBO VCE(sat) DC current transfer ratio hFE Transition frequency fT Output capacitance Cob Min.
−60 −50 −5 − − − 120 − − Typ.
− − − − − − − 150 20 Max.
− − − −0.
1 −0.
1 −0.
4 270 − − Unit V V V µA µA V − MHz pF Conditions IC = −50µA IC = −1mA IE = −50µA VCB = −40V VEB = −4V IC/IB = −500mA/−50mA VCE/IC = −3V/−0.
5A VCE=−5V , IE=50mA , f=100MHz VCB=−10V , IE=0A , f=1MHz zPackaging specifications and hFE Type 2SA1900 Package MPT3 hFE Marking Q AL ∗ Code T100 Basic ordering unit (pleces) 1000 ∗ Denotes hFE Rev.
C 1/2 Transistors 2SA1900 COLLECTOR CURRENT : IC (A) zElectric characteristics curves −1.
0 −0.
8 −8mA −9mA −10mA −7mA −6mA Ta=25°C −5mA −0.
6 −4mA −3mA −0.
4 −2mA −0.
2 IB=−1mA 0 0 −1 −2 −3 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.
1 Grounded emitter output characteristics DC CURRENT GAIN : hFE 1000 Ta=25°C 500 200 VCE=−3V 100 50 20 10 5 2 1 −0.
001 −0.
01 −0.
1 −1 −2 COLLECTOR CURRENT : IC (A) Fig.
2 DC current gain vs.
collector current COLLECTOR SATURATION VO...


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