isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC3790
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Complement to Type 2SA1480 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high-definition CRT display and video output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
300
V
VCEO
Collector-Emitter Voltage
300
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.
1
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃
TJ
Ju...