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2SC3707

Panasonic Semiconductor
Part Number 2SC3707
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm ■ Features • Possible with the s...
Datasheet PDF File 2SC3707 PDF File

2SC3707
2SC3707

Overview
Transistors 2SC3707 Silicon NPN epitaxial planar type For UHF amplification Unit: mm ■ Features • Possible with the small current and low voltage 0.
40+–00.
.
0150 3 0.
16+–00.
.
0160 1.
50–+00.
.
0255 2.
8–+00.
.
32 • High transition frequency fT 0.
4±0.
2 • Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine 1 2 packing (0.
95) (0.
95) 5˚ (0.
65) 1.
9±0.
1 / ■ Absolute Maximum Ratings Ta = 25°C 2.
90+–00.
.
0250 10˚ Parameter Symbol Rating Unit e pe) Collector-base voltage (Emitter open) VCBO 10 V c e.
d ty Collector-emitter voltage (Base open) VCEO 7 V n d stag tinue Emitter-base voltage (Collector open) VEBO 2 0 to 0.
1 1.
1–+00.
.
12 1.
1–+00.
.
13 V a e cle con Collector current IC 10 mA lifecy , dis Collector power dissipation PC 50 mW n u duct typed Junction temperature Tj 150 °C te tin Pro ed Storage temperature Tstg −55 to +150 °C Marking Symbol: 2X 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions Min Typ Max Unit c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1.
5 V, IC = 0 M is con inten Forward current transfer ratio hFE VCE = 1 V, IC = 1 mA /Dis ma Transition frequency fT VCE = 1 V, IC = 1 mA, f = 0.
8 GHz ce pe, Collector output capacitance D nan e ty (Common base, input open circuited) Cob VCB = 1 V, IE = 0, f = 1 MHz 1 µA 1 µA 50 150  4 GHz 0.
4 pF ainte nanc Forward transfer gain M inte Maximum unilateral power gain d ma Noise figure S21e2 GUM NF VCE = 1 V, IC = 1 mA, f = 0.
8 GHz VCE = 1 V, IC = 1 mA, f = 0.
8 GHz VCE = 1 V, IC = 1 mA, f = 0.
8 GHz 6.
0 dB 15 dB 3.
5 dB (plane Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
H...


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