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2SC3704

Panasonic Semiconductor
Part Number 2SC3704
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description Transistors 2SC3704 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features • Low ...
Datasheet PDF File 2SC3704 PDF File

2SC3704
2SC3704


Overview
Transistors 2SC3704 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit: mm ■ Features • Low noise figure NF 0.
40+–00.
.
0150 3 0.
16+–00.
.
0160 1.
50–+00.
.
0255 2.
8–+00.
.
32 • High forward transfer gain S21e2 0.
4±0.
2 • High transition frequency fT • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 2 (0.
95) (0.
95) 1.
9±0.
1 2.
90+–00.
.
0250 5˚ (0.
65) / ■ Absolute Maximum Ratings Ta = 25°C 10˚ e e) Parameter Symbol Rating Unit c e.
d typ Collector-base voltage (Emitter open) VCBO 15 V n d stag tinue Collector-emitter voltage (Base open) VCEO 10 0 to 0.
1 1.
1–+00.
.
12 1.
1–+00.
.
13 V a e cle con Emitter-base voltage (Collector open) VEBO 2 V lifecy , dis Collector current IC 80 mA n u ct ped Collector power dissipation PC 200 mW te tin Produ ed ty Junction temperature Tj 150 °C ur tinu Storage temperature Tstg −55 to +150 °C Marking Symbol: 2W 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package in n s followlianngefdodiscon ■ Electrical Characteristics Ta = 25°C ± 3°C a o lude e, p Parameter Symbol Conditions c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1 V, IC = 0 M is con inten Forward current transfer ratio hFE1 VCE = 8 V, IC = 20 mA /Dis ma hFE2 VCE = 1 V, IC = 3 mA D ance type, Transition frequency fT VCE = 8 V, IC = 20 mA, f = 0.
8 GHz ten ce Collector output capacitance ain nan (Common base, input open circuited) Cob VCB = 10 V, IE = 0, f = 1 MHz M inte Forward transfer gain ma Maximum unilateral power gain (planed Noise figure S21e2 GUM NF VCE = 8 V, IC = 20 mA, f = 0.
8 GHz VCE = 8 V, IC = 20 mA, f = 0.
8 GHz VCE = 8 V, IC = 7 mA, f = 0.
8 GHz Min Typ Max Unit 1 µA 1 µA 50 150 300  80 280 6 GHz 0.
7 1.
2 pF 13 dB 14 dB 1.
0 1.
7 dB Note) Measuring methods are based on JAPANESE IND...



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