INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD7E
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 250V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.
2V(Max) @IC= 3.
75A
APPLICATIONS ·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
350 V
VCEO
Collector-Emitter Voltage
250 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous Collector Power Dissipation
PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range
7.
5 A
75 W
175 ℃
-55~175
℃
THERMAL CHARACTERISTICS
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