INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD8F
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A
APPLICATIONS ·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO
Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous Collector Power Dissipation
PC @ TC=75℃ TJ Junction Temperature Tstg Storage Temperature Range
15 A
100 W
175 ℃
-55~175
℃
THERMAL CHARACTERISTICS
SYMBO...