isc Silicon
PNP Darlington Power
Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.
5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio amplifier output stages , general
purpose amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
BDT60
-60
VCBO
Collector-Base Voltage
BDT60A
-80
V
BDT60B
-100
BDT60C
-120
BDT60
-60
VCEO
Collector-Emitter Voltage
BDT60A
-80
...