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BDT60AF

INCHANGE
Part Number BDT60AF
Manufacturer INCHANGE
Description PNP Transistor
Published Sep 22, 2020
Detailed Description isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·C...
Datasheet PDF File BDT60AF PDF File

BDT60AF
BDT60AF

Overview
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF ·Complement to Type BDT61F/61AF/61BF/61CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60F -60 VCBO Collector-Base Voltage BDT60AF -80 V BDT60BF -100 BDT60CF -120 BDT60F -60 VCEO Collector-Emitter Voltage BDT60AF -80 V BDT60BF -100 BDT60CF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Pulse -6 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.
1 A 25 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.
iscsemi.
com MAX UNIT 5 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT60F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT60AF BDT60BF IC= -30mA; IB= 0 BDT60CF VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= -1.
5A; IB= -6mA Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current IC= -1.
5A ; VCE= -3V VCB= -30V; IE= 0 VCB= 1/2VCBO; IE= 0; TJ=150℃ VCE= 1/2VCEO; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.
5A ; VCE= -3V hFE-2 DC Current Gain IC= -1.
5A ; VCE= -3V hFE-3 DC Current Gain IC= -4A ; VCE= -3V VECF-1 C-E Diode Forward Voltage IF= 1.
5A VECF-2 C-E Diode Forward Voltage IF= 4A Switching Times ton Turn-On T...


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