HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested BVDSS = 200 V RDS(on) typ ȍ ID = 9.
0 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed Gate-Sour...

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