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HFP630A

SemiHow
Part Number HFP630A
Manufacturer SemiHow
Description 200V N-Channel MOSFET
Published Jun 27, 2016
Detailed Description HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technolog...
Datasheet PDF File HFP630A PDF File

HFP630A
HFP630A

Overview
HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ.
) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 200 V RDS(on) typ ȍ ID = 9.
0 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Power Dissipation (TC = 25୅) - Derate above 25୅ 200 9.
0 5.
7 36 ρ30 232 9.
0 9.
5 60 0.
48 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V mJ A mJ W W/୅ ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ.
--- Max.
2.
1 62.
5 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͡͝ͻΒΟ͑ͣͧ͑͢͡ HFP630A Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics VGS Gate Threshold Voltage Static Drain-Source RDS(ON) On-Resistance VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 4.
5 A 2.
0 -- gFS Forward Transconductance VDS = 10 V, ID = 4.
5 A -- Off Characteristics BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS = 0 V, ID = 250 Ꮃ VDS = 200 V, VGS = 0 V VDS = 160 V, TJ = 125୅ VGS = ρ30 V, VDS = 0 V 200 ---- Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.
0 MHz ---- Switching Characteristics td(...


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