2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW≤10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol ...

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