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2SK1622L

Hitachi Semiconductor
Part Number 2SK1622L
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOS FET
Published Jul 11, 2016
Detailed Description 2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • ...
Datasheet PDF File 2SK1622L PDF File

2SK1622L
2SK1622L


Overview
2SK1622(L), 2SK1622(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 LDPAK 4 4 123 D 12 3 G S 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK1622(L), 2SK1622(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW≤10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) IDR Pch*2 Tch Tstg Ratings 60 ±20 25 100 25 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1622(L), 2SK1622(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static Drain to source on state RDS(on) resistance — — 1.
0 — — Forward transfer admittance |yfs| 12 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage td(on) tr td(off) tf VDF — — — — — Body to drain diode reverse recovery time trr — Note 1.
Pulse test Typ Max —— —— — — — 0.
033 0.
05 20 1400 720 220 15 130 270 180 1.
3 ±10 250 2.
0 0.
04 0.
06 — — — — — — — — — 135 — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V *1 ID = 15 A, VGS = 4 V *1 ID = 15 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz ID = 15 A, VGS = 10 V, RL = 2 Ω IF = 25 A, VGS = 0 IF = 25 A, VGS = 0, diF/dt = 50 A/µs See charac...


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