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2SK1620L

Hitachi Semiconductor
Part Number 2SK1620L
Manufacturer Hitachi Semiconductor
Description Silicon N-Channel MOSFET
Published Mar 30, 2005
Detailed Description 2SK1620(L), 2SK1620(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • ...
Datasheet PDF File 2SK1620L PDF File

2SK1620L
2SK1620L

Overview
2SK1620(L), 2SK1620(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Outline LDPAK 4 4 123 D 12 3 G S 1.
Gate 2.
Drain 3.
Source 4.
Drain 2SK1620(L), 2SK1620(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 150 ±20 10 40 10 50 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1620(L), 2SK1620(S) Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 150 Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current I...


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