isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
6N80
·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage
: VDSS= 800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION.
Switch-mode and resonant-mode Power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
6
A
IDM
Drain Current-Single Plused
24
A
PD
Total Dissipation @TC=2...