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6N06T

NXP
Part Number 6N06T
Manufacturer NXP
Description PHT6N06T
Published Feb 17, 2014
Detailed Description PHT6N06T TrenchMOS™ standard level FET M3D087 Rev. 02 — 03 February 2003 Product data 1. Product profile 1.1 Descri...
Datasheet PDF File 6N06T PDF File

6N06T
6N06T

Overview
PHT6N06T TrenchMOS™ standard level FET M3D087 Rev.
02 — 03 February 2003 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability: PHT6N06T in SOT223.
1.
2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package.
1.
3 Applications s DC to DC converters s General purpose switching.
1.
4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.
3 W s ID ≤ 5.
5 A s RDSon ≤ 150 mΩ 2.
Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description Simplified outline gate (g) drain (d) 4 source (s) drain (d) Symbol d g MBB076 s 1 2 3 Top view MSB002 - 1 SOT223 Philips Semiconductors PHT6N06T TrenchMOS™ standard level FET 3.
Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage...


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