SEMICONDUCTOR
TECHNICAL DATA
FTD2058
FTD2058
TRANSISTOR (
NPN)
FEATURES Low VCE(sat): VCE(sat)=1.
0V(Max.
) (IC/IB=2A/0.
2A) Complementary to FTB1366
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60 V
VCEO
Collector-Emitter Voltage
60 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current -Continuous 3 A
PC Collector power dissipation
2W
TJ Junction temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
TO-220F
1.
BASE 2.
COLLECTOR 3.
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
Collector-emitter breakdown voltage
E...