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FTD2003

Sanyo Semiconductor Corporation
Part Number FTD2003
Manufacturer Sanyo Semiconductor Corporation
Description N-Channel Silicon MOS FET
Published Mar 7, 2009
Detailed Description www.DataSheet4U.com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resi...
Datasheet PDF File FTD2003 PDF File

FTD2003
FTD2003

Overview
www.
DataSheet4U.
com FTD2003 N- Channel Silicon MOS FET Very High Speed-Switchng TENTATIVE Features • Low ON-state resistance.
• 2.
5V drive.
• Mount height of 1.
1mm.
• Complex Type enabling high density mount Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current(DC) Drain Current(Pulse) Allowable power Dissipation Total Dissipation Channel Temperature Storage Temperature Electrical Characteristics / Ta=25°C Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain to Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate Source Charge Gate Drain Charge Diode Forward Voltage Marking : D2003 Switching Time Test Circuit VIN 4V 0V VIN PW=10µS D.
C.
≤1% D VDD=10V D2 ID=2.
2A RL=4.
5Ω VOUT 6.
4 4.
5 S2 S2 G2 0.
65 8 7 6 5 3.
0 0.
95 0.
425 unit VD...


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