Part Number
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IS43R32800B |
Manufacturer
|
Integrated Silicon Solution |
Description
|
256Mb DDR Synchronous DRAM PRELIMINARY INFORMATION |
Published
|
Jul 25, 2016 |
Detailed Description
|
IS43R32800B
8Mx32 256Mb DDR Synchronous DRAM
PRELIMINARY INFORMATION MAY 2008
FEATURES • Vdd/Vddq=2.5V+0.2V (-5, -6,...
|
Datasheet
|
IS43R32800B
|
Overview
IS43R32800B
8Mx32 256Mb DDR Synchronous DRAM
PRELIMINARY INFORMATION MAY 2008
FEATURES • Vdd/Vddq=2.
5V+0.
2V (-5, -6, -75)
• Double data rate architecture; two data transfers per clock cycle
• Bidirectional, data strobe (DQS) is transmitted/ received with data
• Differential clock input (CLK and /CLK)
• DLL aligns DQ and DQS transitions with CLK transitions edges of DQS
• Commands entered on each positive CLK edge;
• Data and data mask referenced to both edges of DQS
• 4 bank operation controlled by BA0, BA1 (Bank Address)
• /CAS latency –2.
0/2.
5/3.
0 (programmable)
• Burst length - 2/4/8 (programmable)
• Burst type - Sequential/ Interleave (programmable)
• Auto precharge / All ...
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