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IS43R32800B

Part Number	IS43R32800B
Manufacturer	Integrated Silicon Solution
Description	256Mb DDR Synchronous DRAM PRELIMINARY INFORMATION
Published	Jul 25, 2016
Detailed Description	IS43R32800B 8Mx32 256Mb DDR Synchronous DRAM PRELIMINARY INFORMATION MAY 2008 FEATURES • Vdd/Vddq=2.5V+0.2V (-5, -6,...
Datasheet	IS43R32800B PDF File

Overview

IS43R32800B 8Mx32 256Mb DDR Synchronous DRAM PRELIMINARY INFORMATION MAY 2008 FEATURES • Vdd/Vddq=2.
5V+0.
2V (-5, -6, -75) • Double data rate architecture; two data transfers per clock cycle • Bidirectional, data strobe (DQS) is transmitted/ received with data • Differential clock input (CLK and /CLK) • DLL aligns DQ and DQS transitions with CLK transitions edges of DQS • Commands entered on each positive CLK edge; • Data and data mask referenced to both edges of DQS • 4 bank operation controlled by BA0, BA1 (Bank Address) • /CAS latency –2.
0/2.
5/3.
0 (programmable) • Burst length - 2/4/8 (programmable) • Burst type - Sequential/ Interleave (programmable) • Auto precharge / All ...

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