isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF150
DESCRIPTION ·Drain Current –ID=40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.
055Ω(Max) ·High Power,High Speed Applications ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
100
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
40
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Sto...