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IRF1010

nELL
Part Number IRF1010
Manufacturer nELL
Description N-Channel Power MOSFET
Published Apr 22, 2014
Detailed Description SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTIO...
Datasheet PDF File IRF1010 PDF File

IRF1010
IRF1010

Overview
SEMICONDUCTOR IRF1010 Series N-Channel Power MOSFET (84A, 60Volts) D D RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF1010 is a three-terminal silicon device with current conduction capability of 84A, fast switching speed, low on-state resistance, breakdown voltage rating of 60V, and max.
threshold voltage of 4 volts.
They are designed as an extremely efficient and reliable device for use in a wide variety of applications.
These transistors can be operated directly from integrated circuits.
G G D S TO-220AB (IRF1010A) D S FEATURES RDS(ON) = 8.
5mΩ @ VGS = 10V Ultra low gate charge(86nC max.
) Low reverse transfer capacitance (C RSS = 200pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature TO-263(D2PAK) (IRF1010H) D (Drain) PRODUCT SUMMARY ID (A) ID (A), Package Limited VDSS (V) RDS(ON) (mΩ) QG(nC) max.
84 75 60 8.
5 @ V GS = 10V 86 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage V GS =10V, T C =25°C Continuous Drain Current (Note 1) TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 60 60 ±20 84 60 UNIT V V GS =10V, T C =100°C Pulsed Drain current(Note 2) Avalanche current(Note 2) Repetitive avalanche energy(Note 2 ) Single pulse avalanche energy(Note 3) Peak diode recovery dv/dt(Note 4) Total power dissipation Derating factor above 25 ° C Operation junction temperature Storage temperature Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.
6mm from case T C =25°C See fig.
12,16,17 A 340 51 mJ L=0.
077mH, I AS =51A 99 5 140 0.
90 -55 to 175 -55 to 175 300 10 (1.
1) lbf .
in (N .
m) ºC V /ns W W /°C Note: 1.
Calculated continuous current based on maximum allowable junction temperature.
Package limitation current is 75 A .
2 .
Repetitive rating: pulse width limi...


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