INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF153
DESCRIPTION ·Drain Current ID=33A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.
08Ω(Max) ·High Power,High Speed Applications
APPLICATIONS ·Switching power supplies ·UPS ·Motor controls ·High energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
60 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 33 A
Total Dissipation@TC=25℃
150 W
Max.
Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
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