INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRF225
DESCRIPTION ·Drain Current ID=3.
3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 250V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =1.
5Ω(Max) ·High Speed Applications
APPLICATIONS ·Switching power supplies
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS ID Ptot Tj Tstg
Drain-Source Voltage (VGS=0)
250 V
Gate-Source Voltage
±20
V
Drain Current-continuous@ TC=25℃ 3.
3 A
Total Dissipation@TC=25℃
40 W
Max.
Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to ...