isc N-Channel MOSFET
Transistor
INCHANGE Semiconductor
IRF820
DESCRIPTION ·Drain Current –ID= 2.
5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3Ω(Max) ·Fast Switching Speed ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current,high speed switching · Swith mode power supplies(smps) ·DC-AC converters for welding equipmentand uninterruptible power
supplies and motor driver
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
2.
5
A
P...