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IRF8010L

International Rectifier
Part Number IRF8010L
Manufacturer International Rectifier
Description SMPS MOSFET
Published Oct 15, 2010
Detailed Description www.DataSheet.in PD - 94573 SMPS MOSFET Applications l High frequency DC-DC converters l UPS and Motor Control Benefit...
Datasheet PDF File IRF8010L PDF File

IRF8010L
IRF8010L

Overview
www.
DataSheet.
in PD - 94573 SMPS MOSFET Applications l High frequency DC-DC converters l UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001) l Fully Characterized Avalanche Voltage and Current l Typical RDS(on) = 12mΩ l HEXFET® Power MOSFET IRF8010S IRF8010L ID 80A‡ 15mΩ VDSS 100V RDS(on) max D2Pak IRF8010S TO-262 IRF8010L Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max.
80 57 320 260 1.
8 ± 20 i Units A W W/°C V V/ns °C c PD @TC = 25°C Power Dissipation VGS dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and e 16 -55 to + 175 Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.
6mm from case ) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Junction-to-Case Junction-to-Case (end of life) Typ.
––– ––– 0.
50 ––– Max.
0.
57 0.
80 ––– 40 Units °C/W g j Case-to-Sink, Flat, Greased Surface Junction-to-Ambient (PCB Mount, steady state) Notes  through ˆ are on page 8 www.
irf.
com 1 01/28/03 www.
DataSheet.
in IRF8010S/IRF8010L Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min.
Typ.
Max.
Units 100 ––– ––– 2.
0 ––– ––– ––– ––– ––– 0.
11 12 ––– ––– ––– ––– ––– ––– ––– 15 4.
0 20 250 200 -200 nA V Conditions VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 45A f V µA VDS = VGS, ID = 250µA VDS = 100V, VGS = 0V VDS = 100V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter gfs ...


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