INCHANGE Semiconductor
isc N-Channel MOSFET
Transistor
isc Product Specification
IRFS350A
FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS VGS
Drain-Source Voltage Gate-Source Voltage-Continuous
400 ±30
V V
ID Drain Current-Continuous
11.
5 A
IDM Drain Current-Single Pluse
68 A
PD Total Dissipation @TC=25℃
92 W
TJ
Max.
Operating Junction Temperature
-55~150 ℃
Tstg Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
S...