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IRFS350A

Fairchild Semiconductor
Part Number IRFS350A
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 3, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
Datasheet PDF File IRFS350A PDF File

IRFS350A
IRFS350A

Overview
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 400V ♦ Low RDS(ON): 0.
254Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt (3) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds IRFS350A BVDSS = 400 V RDS(on) = 0.
3Ω ID = 11.
5 A TO-3PF 1 2 3 1.
Gate 2.
Drain 3.
Source Value 400 11.
5 7.
3 68 ±30 1134 11.
5 9.
2 4.
0 92 0.
74 - 55 to +150 300 Units V A A V mJ A mJ V/ns W...


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