CEP6030LS2/CEB6030LS2
PRELIMINARY
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
FEATURES
30V , 52A , RDS(ON)=13.
5m Ω
@VGS=10V.
RDS(ON)=20m Ω
@VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
G
D
GS
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous -Pulsed
Drain-Source Diode Forward Current
Maximum Power Dissipation @Tc=25 C Derate above 25 C
Operating and StorageTemperature Range
Symbol VDS VGS ID IDM IS
PD
TJ, TSTG
Limit
30
Ć20
52
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