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CEB6030L

Chino-Excel Technology
Part Number CEB6030L
Manufacturer Chino-Excel Technology
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.5mΩ @VGS = 10V. RD...
Datasheet PDF File CEB6030L PDF File

CEB6030L
CEB6030L

Overview
CEP6030L/CEB6030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 52A,RDS(ON) = 13.
5mΩ @VGS = 10V.
RDS(ON) = 20mΩ @VGS = 4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 30 ±20 52 156 75 0.
5 Operating and Store Temperature Range TJ,Tstg -65 to 175 Units V V A A W W/ C C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 2 62.
5 Units C/W C/W 1998.
March 4 - 98 http://www.
cetsemi.
com CEP6030L/CEB6030L Electrical Characteristics Tc = 25 C unless ...


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