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CEB6030LS2

Chino-Excel Technology
Part Number CEB6030LS2
Manufacturer Chino-Excel Technology
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEP6030LS2/CEB6030LS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , ...
Datasheet PDF File CEB6030LS2 PDF File

CEB6030LS2
CEB6030LS2


Overview
CEP6030LS2/CEB6030LS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 52A , RDS(ON)=13.
5m Ω @VGS=10V.
RDS(ON)=20m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and StorageTemperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 30 Ć20 52 156 52 50 0.
4 -65 to 175 Unit V V A A A W W/ C C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RįJC RįJA 15-7 2.
5 62.
5 C /W C /W 15 CEP6030LS2/CEB6030LS2 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter Symbol C...


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