2SB1261
Transistor(
PNP)
1.
BASE
1 2.
COLLECTOR
3.
EMITTER
TO-252-2L
Features
High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.
3V
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-60
VCEO
Collector-Emitter Voltage
-60
VEBO
Emitter-Base Voltage
-7
IC Collector Current -Continuous
-3
PD Collector Power Dissipation
2
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
Units V V V A W ℃ ℃
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base ...