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2SB1202

Part Number	2SB1202
Manufacturer	GME
Description	PNP Epitaxial Planar Silicon Transistors
Published	Nov 19, 2017
Detailed Description	Production specification PNP Epitaxial Planar Silicon Transistors FEATURES z Adoption of FBET,MBIT processes. Pb z ...
Datasheet	2SB1202 PDF File

Overview

Production specification PNP Epitaxial Planar Silicon Transistors FEATURES z Adoption of FBET,MBIT processes.
Pb z Large current capacity and wide ASO.
Lead-free z Low collector-to-emitter saturation voltage.
z Fast switching speed.
z Small and slim package making it easy to Make 2SB1202-used sets smaller.
APPLICATIONS z High-Current Switching Applications.
z Voltage regulators,relay drivers,lamp drivers, Electrical equipment.
TO-251 2SB1202 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -3 A ICP Collector Power Dissipation -6 A PC Collector Power Dissipation 1W Tj ,Tstg Junction and Storage temperature range -55 to +150 ℃ V/(W)008 Rev.
A www.
gmicroelec.
com 1 Production specification PNP Epitaxial Planar Silicon Transistors 2SB1202 ELECTRICAL CHARACTERISTIC...

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