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2SB1202

ON Semiconductor
Part Number 2SB1202
Manufacturer ON Semiconductor
Description Bipolar Transistor
Published May 18, 2014
Detailed Description 2SB1202/2SD1802 Bipolar Transistor (–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA Features • Adoption of FBET ...
Datasheet PDF File 2SB1202 PDF File

2SB1202
2SB1202

Overview
2SB1202/2SD1802 Bipolar Transistor (–)50 V, (–)3 A, Low VCE(sat) (PNP)NPN Single TP/TP−FA Features • Adoption of FBET and MBIT Processes • Large Current Capacitance and Wide ASO • Low Collector to Emitter Saturation Voltage • Fast Switching Speed • Small and Slim Package Making it Easy to Make 2SB1202/2SD1802−used Sets Smaller • These Devices are Pb−Free and are RoHS Compliant Applications • Voltage Regulators, Relay Drivers, Lamp Drivers, Electrical Equipment ABSOLUTE MAXIMUM RATINGS at TA = 25°C Parameter Symbol Conditions Ratings Unit Collector to Base Voltage VCBO (−)60 V Collector to Emitter Voltage VCEO (−)50 V Emitter to Base Voltage VEBO (−)6 V Collector Current IC (−)3 A Collector Current (Pulse) ICP (−)6 A Collector Dissipation PC 1 W TC = 25°C 15 W Junction Temperature TJ 150 °C Storage Temperature TSTG − 55 to °C +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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4 1 3 (For PNP, the polarity is reversed.
) IPAK / TP CASE 369AJ DPAK / TP−FA CASE 369AH MARKING DIAGRAM B1202 D1802 ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2013 1 March, 2019 − Rev.
0 Publication Order Number: 2SB1202/D 2SB1202/2SD1802 ELECTRICAL CHARACTERISTICS at TA = 25°C Parameter Symbol Conditions Ratings Min Typ Max Unit Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain−Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB = (-)40 V, IE = 0 A VEB = (-)4V, IC = 0 A VCE = (-)2 V, IC = (-)100 mA VCE = (-)2 V, IC = (-)3 A VCE = (-)10 V, IC = (-)50 mA VCB = (-)10 V, f = 1 MHz 100* 35 150 (39)25 (-)1 (-)1 560* mA mA MHz pF Collector to Emitter Saturation Voltage VCE(sat) IC = (-)2 A, IB = (-)100 mA (−0.
35)0.
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