INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
6N60
·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.
2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600 V
VGS Gate-Source Voltage-Continuous
±20
V
ID Drain Current-Continuous
6A
IDM Drain Current-Single Plused
24 A
PD Total Dissipation @TC=25℃
125 W
Tj Max.
Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~1...