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Part Number
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CHA2190 |
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Manufacturer
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United Monolithic Semiconductors |
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Description
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20-30GHz Low Noise Amplifier |
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Published
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Mar 23, 2005 |
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Detailed Description
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CHA2190
RoHS COMPLIANT
20-30GHz Low Noise Amplifier
self biased GaAs Monolithic Microwave IC
Description
The circuit is ...
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|
Datasheet
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CHA2190
|
Overview
CHA2190
RoHS COMPLIANT
20-30GHz Low Noise Amplifier
self biased GaAs Monolithic Microwave IC
Description
The circuit is a two-stages self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
Main Feature
Broad band performance 20-30GHz 2.
2dB noise figure 15dB gain, ± 0.
5dB gain flatness Low DC power consumption, 50mA 20dBm 3rd order intercept point Chip size : 1.
670 x 1.
03x 0.
1mm
dBSij & NF ( dB )
18 14 10
6 2 -2 -6 -10 -14 -18 -22 -26
14
dBS11
dBS21
dBS22
16 18 20 22 24 26 28 30
Frequency ( GHz )
NF 3...
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