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CHA2159

United Monolithic Semiconductors
Part Number CHA2159
Manufacturer United Monolithic Semiconductors
Description 55-65GHz Low Noise / Medium Power Amplifier
Published Feb 2, 2016
Detailed Description CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA215...
Datasheet PDF File CHA2159 PDF File

CHA2159
CHA2159

Overview
CHA2159 RoHS COMPLIANT 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier.
It is designed for a wide range of applications, from military to commercial communication systems.
The backside of the chip is both RF and DC grounded.
This simplifies the assembly process.
The circuit is manufactured with a pHEMT process, 0.
15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
Main Features ■ 4.
0 dB noise figure ■ 20 dB gain ■ 14 dBm output power (-1dB gain comp.
) ■ DC power consumption, 115mA @ 3.
5V ■ Chip size: 2.
35 x 1.
11 x 0.
10 mm Gain & RLosses (dB) 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 55 dBS11 dBS22 dBS21 NF Ty p.
60 Frequency (GHz) 65 Typical on Wafer Measurements Main Characteristics Tamb = +25°C, Vd = 3.
5V Symbol Fop G NF P1dB Id Parameter Operating frequency range Small signal gain Noise figure Output power at 1dB gain compression Bias current Min Typ Max 55 65 18 20 4.
0 4.
8 13 14 115 150 ESD Protection: Electrostatic discharge sensitive device.
Observe handling precautions! Unit GHz dB dB dBm mA Ref.
: DSCHA21597262 - 19 Sep 07 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.
A.
S.
Route Départementale 128 - B.
P.
46 - 91401 Orsay Cedex France Tel.
: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2159 55-65GHz Low Noise Amplifier Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.
5V Symbol Parameter Fop Operating frequency range (1) G Small signal gain (1) ∆G Small signal gain flatness (1) Is Reverse isolation (1) NF Noise figure P1dB CW output power at 1dB compression (1) VSWRin Input VSWR (1) VSWRout Output VSWR (1) Id Bias current Vd DC Voltage Min Typ Max Unit 55 65 GHz 18 20 dB ±1.
0 dB 40 50 dB 4.
0 4.
8 dB 13 14 dBm 2.
5:1 4.
0:1 2.
0:1 2.
5:1 115 130 mA 3.
5 V (1)...


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