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Part Number
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MTB110P08KN6 |
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Manufacturer
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Cystech Electonics |
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Description
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P-Channel Enhancement Mode Power MOSFET |
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Published
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Sep 4, 2016 |
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Detailed Description
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CYStech Electronics Corp.
Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8
-80V P-Channel Enh...
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Datasheet
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MTB110P08KN6
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Overview
CYStech Electronics Corp.
Spec.
No.
: C123N6 Issued Date : 2015.
11.
24 Revised Date : Page No.
: 1/8
-80V P-Channel Enhancement Mode Power MOSFET
MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C
ID@VGS=-10V, TA=25°C
RDSON(TYP)
VGS=-10V, ID=-2A VGS=-4.
5V, ID=-1A
-80V -3.
7A -2.
9A 104mΩ 141mΩ
Features
• Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package • ESD protected gate
Equivalent Circuit
MTB110P08KN6
G：Gate S：Source D：Drain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage Gate-Source Voltage
Parameter
TC=25 °C, VGS=-10V
Continuous Drain Current
TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1)
TA=70 °C, VGS=-10V (N...
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