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MTB110P08KJ3

Cystech Electonics
Part Number MTB110P08KJ3
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C123J3 Issued Date : 2016.07.20 Revised Date : Page No. : 1/9 P-Channel Enhancem...
Datasheet PDF File MTB110P08KJ3 PDF File

MTB110P08KJ3
MTB110P08KJ3

Overview
CYStech Electronics Corp.
Spec.
No.
: C123J3 Issued Date : 2016.
07.
20 Revised Date : Page No.
: 1/9 P-Channel Enhancement Mode Power MOSFET MTB110P08KJ3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDS(ON)@VGS=-10V, ID=-5A RDS(ON)@VGS=-4.
5V, ID=-3A Features • Low Gate Charge • Simple Drive Requirement • ESD Protected Gate • Pb-free Lead Plating & Halogen-free Package -80V -11.
3A -3.
2A 103mΩ(typ) 141mΩ(typ) Equivalent Circuit MTB110P08KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB110P08KJ3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant p...


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