DatasheetsPDF.com

MTB110P08KN6

Cystech Electonics
Part Number MTB110P08KN6
Manufacturer Cystech Electonics
Description P-Channel Enhancement Mode Power MOSFET
Published Sep 4, 2016
Detailed Description CYStech Electronics Corp. Spec. No. : C123N6 Issued Date : 2015.11.24 Revised Date : Page No. : 1/8 -80V P-Channel Enh...
Datasheet PDF File MTB110P08KN6 PDF File

MTB110P08KN6
MTB110P08KN6

Overview
CYStech Electronics Corp.
Spec.
No.
: C123N6 Issued Date : 2015.
11.
24 Revised Date : Page No.
: 1/8 -80V P-Channel Enhancement Mode Power MOSFET MTB110P08KN6 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDSON(TYP) VGS=-10V, ID=-2A VGS=-4.
5V, ID=-1A -80V -3.
7A -2.
9A 104mΩ 141mΩ Features • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package • ESD protected gate Equivalent Circuit MTB110P08KN6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter TC=25 °C, VGS=-10V Continuous Drain Current TC=70 °C, VGS=-10V TA=25 °C, VGS=-10V (Note 1) TA=70 °C, VGS=-10V (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C Total Power Dissipation TC=70 °C TA=25 °C (Note 1) TA=70 °C (Note 1) Operating Junction Temperature and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj, Tstg Limits -80 ±20 -3.
7 -3.
0 -2.
9 -2.
3 -20 3.
2 2.
1 2.
0 1.
25 -55~+150 Unit V A W ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)