Ordering number : ENN346G
2SB631, 631K/ 2SD600, 600K
PNP/
NPN Epitaxial Planar Silicon
Transistors
100V/120V, 1A Low-Frequency
Power Amplifier Applications
Features
· High breakdown voltage VCEO 100/120V, High current 1A.
· Low saturation voltage, excellent hFE linearity.
Package Dimensions
unit:mm
2009B
[2SB631, 631K/2SD600, 600K]
8.
0 4.
0
2.
7
1.
5 3.
0 7.
0
11.
0
1.
6 0.
8
0.
8
0.
6
3.
0
0.
5
15.
5
( ) : 2SB631, 631K
Specifications
12 3
2.
4 4.
8
1.
2
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipa...