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2SB600

SavantIC
Part Number 2SB600
Manufacturer SavantIC
Description SILICON POWER TRANSISTOR
Published Feb 16, 2009
Detailed Description SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION ·W...
Datasheet PDF File 2SB600 PDF File

2SB600
2SB600

Overview
SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors 2SB600 DESCRIPTION ·With TO-3 package ·High power dissipations ·Complement to type 2SD555 APPLICATIONS ·For use in audio and power amplifier applications PINNING(see Fig.
2) PIN 1 2 3 Base Emitter Collector Fig.
1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -200 -200 -5 -10 200 150 -55~200 UNIT V V V A W SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP.
2SB600 SYMBOL MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-10A; IB=-1A -1.
5 V VBEsat Base-emitter saturation voltage IC=-10A; IB=-1A -2.
0 V ICBO Collector cut-off current VCB=-200V; IE=0 -0.
1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.
1 mA hFE DC current gain IC=-2A ; VCE=-5V 20 fT Transition frequency IC=-0.
5A ; VCE=-10V 4 MHz 2 SavantIC Semiconductor www.
DataSheet4U.
com Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB600 Fig.
2 outline dimensions (unindicated tolerance:±0.
1mm) 3 ...


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